IRF7380TRPBF vs IRF7341GTRPBF 对比
详细并排对比 IRF7380TRPBF 出自 Infineon 和 IRF7341GTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7380TRPBF | IRF7341GTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.32 | $0.76 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7380TRPBF | — |
| Configuration | Dual N-Channel MOSFET Array (2 independent FETs in one package) | Dual N-Channel |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 3.6 A | 5.1 A |
| On-Resistance RDS(on) max | 73 mOhm at VGS = 10 V | — |
| Technology | IR MOSFET™ (Infineon HEXFET-style planar N-ch) | IR HEXFET Planar MOSFET |
| Total Power Dissipation (PD) | 2 W | — |
| 封装 | SO-8 (8-SO, SOIC-8) | 8-SO (SOIC-8) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作结温 | -55 C to +150 C | — |
| Gate Drive Voltage (typical) | 10 V (full RDS(on)); logic-level not guaranteed | — |
| Lead-Free / RoHS | Yes (Pb-free plating, suffix PBF) | — |
| Packaging | Tape & Reel (suffix TR) | — |
| Primary Application | High-frequency DC-DC converters | — |
| Drain-Source Voltage (VDS) | — | 55 V |
| On-Resistance (RDS(on)) max | — | 50 mOhm at VGS=10V |
| Power Dissipation (PD) | — | 2.4 W |
| Maximum Junction Temperature | — | 175 C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| 工作温度范围 | — | -55 C to +175 C |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |