IRF7495TRPBF vs IRF7854TRPBF 对比
详细并排对比 IRF7495TRPBF 出自 Infineon 和 IRF7854TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7495TRPBF | IRF7854TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.65 | $0.48 |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | IR MOSFET (HEXFET) | HEXFET (planar N-channel) |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at TA=25 C | 7.3 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 22 mOhm | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Total Gate Charge (Qg) Typ | 34 nC at 10 V | — |
| Input Capacitance (Ciss) Max | 1530 pF at 25 V | — |
| Power Dissipation (PD) Max at TA=25 C | 2.5 W | — |
| 工作温度范围 | -55 C to +150 C (TJ) | -55°C to +150°C (TJ) |
| 封装 | 8-SOIC (SO-8) | SO-8 |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (unlimited) | — |
| RoHS 状态 | Compliant | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Estimated EOL Date | 2027 | — |
| ECCN | EAR99 | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 10 A |
| Power Dissipation (PD) at Ta=25°C | — | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | — | 13.4 mΩ |
| Gate-Source Threshold Voltage VGS(th) max | — | 4.9 V |
| Total Gate Charge Qg | — | 27 nC |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |
| Qualification | — | JEDEC industrial, Normal level |
| Solder Process | — | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | — | 10 V |