IRF7495TRPBF vs IRF7854TRPBF Comparison
Detailed side-by-side comparison of IRF7495TRPBF by Infineon and IRF7854TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7495TRPBF | IRF7854TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.48 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | IR MOSFET (HEXFET) | HEXFET (planar N-channel) |
| Drain-Source Voltage (VDS) Max | 100 V | β |
| Continuous Drain Current (ID) at TA=25 C | 7.3 A | β |
| On-Resistance RDS(on) Max at VGS=10V | 22 mOhm | β |
| Gate-Source Voltage (VGS) Max | Β±20 V | β |
| Total Gate Charge (Qg) Typ | 34 nC at 10 V | β |
| Input Capacitance (Ciss) Max | 1530 pF at 25 V | β |
| Power Dissipation (PD) Max at TA=25 C | 2.5 W | β |
| Operating Temperature Range | -55 C to +150 C (TJ) | -55Β°C to +150Β°C (TJ) |
| Package | 8-SOIC (SO-8) | SO-8 |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant | β |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| Estimated EOL Date | 2027 | β |
| ECCN | EAR99 | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 10 A |
| Power Dissipation (PD) at Ta=25Β°C | β | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | β | 13.4 mΞ© |
| Gate-Source Threshold Voltage VGS(th) max | β | 4.9 V |
| Total Gate Charge Qg | β | 27 nC |
| Lead-Free / RoHS | β | Yes (PBF suffix, lead-free) |
| Qualification | β | JEDEC industrial, Normal level |
| Solder Process | β | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | β | 10 V |