IRF8736TRPBF vs BSC054N04NSGATMA1 对比

详细并排对比 IRF8736TRPBF 出自 Infineon 和 BSC054N04NSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC054N04NSGATMA1 BSC054N04NSGATMA1 - 40V 81A OptiMOS 3 N-Ch MOSFET | Infineon

BSC054N04NSGATMA1 - 40V 81A OptiMOS 3 N-Ch MOSFET | Infineon

BSC054N04NSGATMA1 ✓ 量产中

规格对比

参数 IRF8736TRPBF BSC054N04NSGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.27 $0.42
FET Type N-Channel —
Technology StrongIRFET / HEXFET OptiMOS 3 (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25C 18 A —
Power Dissipation (PD) Max at TA=25C 2.5 W —
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V —
Gate Charge (Qg) Typical 17 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
封装 SO-8 (8-SO, MS-012AA) PG-TDSON-8-5 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +150C (junction) -55C to +150C
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
MSL 等级 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Avalanche Rated Yes (fully characterized avalanche voltage) —
Configuration Single —
Packaging Tape & Reel (TRPBF suffix) —
Manufacturer — Infineon Technologies
Part Number — BSC054N04NSGATMA1
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Tc=25C — 81 A
Continuous Drain Current (ID) at Ta=25C — 17 A
On-Resistance RDS(on) max at VGS=10V — 5.4 mOhm
Gate-Source Voltage (VGS) max — ±20 V
Power Dissipation at Tc=25C — 57 W
Power Dissipation at Ta=25C — 2.5 W
RoHS 状态 — Compliant
Gate Drive Voltage (recommended) — 10 V
Lead-Free Reflow — Yes

数据手册与资源

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