IRF9540NPBF vs IRF9530NPBF 对比
详细并排对比 IRF9540NPBF 出自 Infineon 和 IRF9530NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF9540NPBF | IRF9530NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.86 | $0.65 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF9540NPBF | — |
| 晶体管类型 | P-Channel MOSFET (HEXFET Power MOSFET) | — |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at Tc | -23 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | +/-20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 117 mOhm | — |
| Total Gate Charge (Qg) | 64.7 nC | — |
| Power Dissipation (PD) at Tc=25C | 140 W | — |
| 工作结温范围 | -55 C to +175 C | — |
| 封装 / 外壳 | TO-220AB (through-hole, 3 pins + tab) | — |
| 安装类型 | Through Hole | Through Hole |
| Process Technology | Planar HEXFET cell structure | — |
| Qualification | JEDEC standard | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes (Pb-free matte tin plating) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TC=25°C | — | -14 A |
| On-Resistance RDS(on) max @ VGS=-10V | — | 200 mΩ |
| Gate-Source Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) typ | — | 38.7 nC |
| Maximum Power Dissition at TC=25°C | — | 79 W |
| 工作结温 | — | -55°C to +175°C |
| 封装 | — | TO-220AB (through-hole) |
| Mounting Screw Torque (max) | — | [DATA_NEEDED: maximum torque] |
| Avalanche Rating | — | Repetitive avalanche rated |
| dv/dt Rating | — | Dynamic dV/dt rated |
| Lead-Free / RoHS Status | — | Lead-Free (PBF suffix), RoHS compliant |