IRF9540NPBF vs IRF9530NPBF 比較
詳細な並列比較: IRF9540NPBF メーカー: Infineon および IRF9530NPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF9540NPBF | IRF9530NPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.86 | $0.65 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF9540NPBF | — |
| トランジスタタイプ | P-Channel MOSFET (HEXFET Power MOSFET) | — |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at Tc | -23 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | +/-20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 117 mOhm | — |
| Total Gate Charge (Qg) | 64.7 nC | — |
| Power Dissipation (PD) at Tc=25C | 140 W | — |
| 動作接合温度範囲 | -55 C to +175 C | — |
| パッケージ / ケース | TO-220AB (through-hole, 3 pins + tab) | — |
| 実装タイプ | Through Hole | Through Hole |
| Process Technology | Planar HEXFET cell structure | — |
| Qualification | JEDEC standard | — |
| RoHS ステータス | Compliant | — |
| Lead-Free | Yes (Pb-free matte tin plating) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TC=25°C | — | -14 A |
| On-Resistance RDS(on) max @ VGS=-10V | — | 200 mΩ |
| Gate-Source Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) typ | — | 38.7 nC |
| Maximum Power Dissition at TC=25°C | — | 79 W |
| 動作接合温度 | — | -55°C to +175°C |
| パッケージ | — | TO-220AB (through-hole) |
| Mounting Screw Torque (max) | — | [DATA_NEEDED: maximum torque] |
| Avalanche Rating | — | Repetitive avalanche rated |
| dv/dt Rating | — | Dynamic dV/dt rated |
| Lead-Free / RoHS Status | — | Lead-Free (PBF suffix), RoHS compliant |