IRFB4020PBF vs IRLS3036TRLPBF 对比

详细并排对比 IRFB4020PBF 出自 Infineon 和 IRLS3036TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRLS3036TRLPBF IRLS3036TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRLS3036TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRLS3036TRLPBF ✓ 量产中

规格对比

参数 IRFB4020PBF IRLS3036TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.38 $1.39
FET Type N-Channel —
Technology IR MOSFET (HEXFET) IR HEXFET (planar DMOS)
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC 18 A —
Power Dissipation (PD) at TC 100 W —
RDS(on) Maximum 100 mOhm —
Gate-Source Voltage (VGS) Maximum 20 V —
Thermal Resistance, Junction-to-Case (RthJC) 1.43 C/W —
工作结温 175 C (max) —
封装 TO-220AB (through-hole) D2PAK (TO-263), surface mount
安装类型 Through Hole Surface Mount
引脚数量 3 (Gate, Drain, Source) —
Lead-Free (PbF suffix) Yes —
Market Qualification Consumer —
Recommended Use Class-D audio amplifier and high-efficiency switching applications —
Polarity — N-Channel
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) at Tc=25C — 270 A
Continuous Drain Current (Id) at Tc=100C — 195 A
Pulsed Drain Current (Idm) — 1100 A
Rds(on) max @ Vgs=10V — 1.9 mOhm
Gate-Source Threshold Voltage (Vgs(th)) — Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max]
Total Gate Charge (Qg) typ — 91 nC
Gate-Source Voltage (Vgs) max — [DATA_NEEDED: Vgs max +/- V]
Power Dissipation (Pd) at Tc=25C — 380 W
工作温度范围 — -55C to +175C
MSL 等级 — 1
RoHS 状态 — Compliant (PBF suffix)
Lead-Free — Yes (PBF suffix)
Integrated Body Diode — Yes (avalanche rated)

数据手册与资源

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