IRFB4110PBF vs IRF1405PBF 对比

详细并排对比 IRFB4110PBF 出自 Infineon 和 IRF1405PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFB4110PBF IRF1405PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.55 $1.42
晶体管类型 N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 120 A (bond-wire limited) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance RDS(on) max at VGS=10V 4.5 mΩ —
On-Resistance RDS(on) typ at VGS=10V 3.7 mΩ —
Power Dissipation (PD) at TC=25°C 370 W —
工作结温 -55 °C to +175 °C —
封装 TO-220AB (through-hole) TO-220AB (through-hole)
Technology HEXFET (planar DMOS) HEXFET (Stripe Planar cell structure)
安装类型 Through Hole Through Hole
RoHS 状态 Compliant (Pb-free suffix) PbF suffix indicates lead-free / RoHS compliant
Lead-Free Yes (PBF suffix denotes Pb-free) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number Suffix — PbF (lead-free, RoHS compliant)
Drain-Source Voltage (V_DS) — 55 V
Continuous Drain Current (I_D, Tc=25C) — 169 A
Continuous Drain Current (I_D, Tc=100C) — [DATA_NEEDED: I_D at Tc=100C]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current rating]
Maximum Power Dissipation (P_D, Tc=25C) — 330 W
R_DS(on) Maximum — 5.3 mOhm @ V_GS = 10 V
Gate Threshold Voltage (V_GS(th)) — 2.0 V to 4.0 V
Maximum Gate-Source Voltage (V_GS) — [DATA_NEEDED: maximum V_GS rating]
Operating Junction Temperature (T_J max) — 175 C
Storage Temperature Range — [DATA_NEEDED: storage temperature range]
Qualification — JEDEC qualified, optimized for switching below 100 kHz
Single Pulse Avalanche Energy (E_AS) — [DATA_NEEDED: avalanche energy rating]
Thermal Resistance Junction-to-Case (R_theta_JC) — [DATA_NEEDED: thermal resistance R_theta_JC]

数据手册与资源

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