IRFH5015TRPBF vs IPP069N20NM6AKSA1 对比
详细并排对比 IRFH5015TRPBF 出自 Infineon 和 IPP069N20NM6AKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ 量产中规格对比
| 参数 | IRFH5015TRPBF | IPP069N20NM6AKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $4.10 |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) | 150 V | 200 V |
| Continuous Drain Current (ID) at TA=25C | 10 A | 15.3 A |
| Continuous Drain Current (ID) at TC=25C | 56 A | 136 A |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | — |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| 封装 | 8-PQFN (5x6) SuperSO8 | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) |
| 安装类型 | Surface Mount | Through Hole |
| Configuration | Single with built-in body diode | — |
| 工作温度 | -55C to +150C (TJ max) | — |
| RoHS 状态 | Compliant | Compliant |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| On-Resistance RDS(on) max at VGS=10V | — | 6.9 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Total Gate Charge at VGS=10V (Qg) | — | [DATA_NEEDED: Qg value] |
| 工作温度范围 | — | -55C to +175C |
| Lead-Free | — | Yes |
| MSL 等级 | — | N/A (through-hole package) |
| Tab Connection | — | Electrically connected to Drain |