IRFH5300TRPBF vs IRFH5301TRPBF 对比
详细并排对比 IRFH5300TRPBF 出自 Infineon 和 IRFH5301TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFH5300TRPBF | IRFH5301TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.45 | $0.36 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 40 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | 336 A | — |
| On-Resistance RDS(on) max at VGS=10V | 1.4 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Gate Charge (Qg) | 50 nC | 37 nC (typical) |
| Power Dissition at TA=25C | 3.6 W | — |
| Power Dissipation at TC=25C | 250 W | — |
| 工作温度范围 | -55C to +150C | -55C to +150C (junction) |
| 封装 | PQFN-8 (5x6 mm) | PQFN (5x6 mm) Single Die |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET (StrongIRFET) | HEXFET (StrongIRFET) |
| Gate Drive Level | Logic-level (5V optimized) | — |
| JEDEC Qualification | Yes | — |
| RoHS 状态 | Compliant | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (TA, 25C) | — | 35 A |
| Continuous Drain Current (TC, 25C) | — | 100 A |
| RDS(on) Max @ VGS=10V | — | 1.85 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (TA) | — | 3.6 W |
| Power Dissipation (TC) | — | 110 W |
| Gate Drive Logic Level | — | Optimized for 5 V VGS drive |
| RoHS / Halogen-Free | — | RoHS compliant, Halogen-free |
| Qualification | — | JEDEC standard |