IRFH5301TRPBF vs IRFH5300TRPBF 对比

详细并排对比 IRFH5301TRPBF 出自 Infineon 和 IRFH5300TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFH5300TRPBF IRFH5300TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRFH5300TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRFH5300TRPBF ✓ 量产中

规格对比

参数 IRFH5301TRPBF IRFH5300TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.36 $0.45
FET Type N-Channel —
Technology HEXFET (StrongIRFET) HEXFET (StrongIRFET)
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current (TA, 25C) 35 A —
Continuous Drain Current (TC, 25C) 100 A —
RDS(on) Max @ VGS=10V 1.85 mOhm —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) 37 nC (typical) 50 nC
Power Dissipation (TA) 3.6 W —
Power Dissipation (TC) 110 W —
工作温度范围 -55C to +150C (junction) -55C to +150C
封装 PQFN (5x6 mm) Single Die PQFN-8 (5x6 mm)
安装类型 Surface Mount Surface Mount
Gate Drive Logic Level Optimized for 5 V VGS drive —
RoHS / Halogen-Free RoHS compliant, Halogen-free —
Qualification JEDEC standard —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 40 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — 336 A
On-Resistance RDS(on) max at VGS=10V — 1.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — +/-20 V
Power Dissition at TA=25C — 3.6 W
Power Dissipation at TC=25C — 250 W
Gate Drive Level — Logic-level (5V optimized)
JEDEC Qualification — Yes
RoHS 状态 — Compliant

数据手册与资源

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