IRFH5301TRPBF vs IRFH5300TRPBF Comparison
Detailed side-by-side comparison of IRFH5301TRPBF by Infineon and IRFH5300TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5301TRPBF
IRFH5301TRPBF - 30V 100A N-Channel HEXFET MOSFET | Infineon
IRFH5301TRPBF β ActiveInfineon
IRFH5300TRPBF
IRFH5300TRPBF - 30V N-Channel HEXFET MOSFET | Infineon
IRFH5300TRPBF β ActiveSpecification Comparison
| Parameter | IRFH5301TRPBF | IRFH5300TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.45 |
| FET Type | N-Channel | β |
| Technology | HEXFET (StrongIRFET) | HEXFET (StrongIRFET) |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (TA, 25C) | 35 A | β |
| Continuous Drain Current (TC, 25C) | 100 A | β |
| RDS(on) Max @ VGS=10V | 1.85 mOhm | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge (Qg) | 37 nC (typical) | 50 nC |
| Power Dissipation (TA) | 3.6 W | β |
| Power Dissipation (TC) | 110 W | β |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C |
| Package | PQFN (5x6 mm) Single Die | PQFN-8 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Drive Logic Level | Optimized for 5 V VGS drive | β |
| RoHS / Halogen-Free | RoHS compliant, Halogen-free | β |
| Qualification | JEDEC standard | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 40 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | 336 A |
| On-Resistance RDS(on) max at VGS=10V | β | 1.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Power Dissition at TA=25C | β | 3.6 W |
| Power Dissipation at TC=25C | β | 250 W |
| Gate Drive Level | β | Logic-level (5V optimized) |
| JEDEC Qualification | β | Yes |
| RoHS Status | β | Compliant |