IRFH8201TRPBF vs IRFH5020TRPBF 对比
详细并排对比 IRFH8201TRPBF 出自 Infineon 和 IRFH5020TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFH8201TRPBF | IRFH5020TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.05 | $0.36 |
| FET Type | N-Channel | MOSFET N-Channel, Metal Oxide |
| Technology | StrongIRFET (trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA=25C | 49 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | 324 A | 63 A |
| RDS(on) max at VGS=10V | 0.95 mOhm | 55 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.35 V max | — |
| Total Gate Charge (Qg) | 56 nC at VGS=10V | — |
| Output Capacitance (Coss) | 7.33 nF | — |
| Reverse Transfer Capacitance (Crss) | 850 pF | — |
| Power Dissipation (TA) | 3.6 W | — |
| Power Dissipation (TC) | 156 W | — |
| 工作温度范围 | -55C to +150C | -55 °C to +150 °C (TJ max) |
| 封装 | SuperSO8 5x6 (PQFN-8) with exposed pad | — |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 (per industry standard for PQFN-8) |
| RoHS 状态 | Compliant | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Family | — | HEXFET Power MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TA=25°C | — | 5.1 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Gate Charge (Qg) typ | — | 11 nC |
| Power Dissipation (TA=25°C) | — | 3.6 W |
| 功耗（TC=25°C） | — | 8.3 W |
| Thermal Resistance, Junction-to-PCB (RthJB) | — | 0.8 °C/W |
| Package Type | — | 8-PQFN (5x6 mm) SuperSO8 |
| Profile Height | — | ≤ 0.9 mm |
| Qualification Standard | — | JEDEC (Normal level) |
| Gate Drive Optimization | — | 10 V VGS |
| RoHS Compliance | — | Compliant (Pb-free suffix PBF) |