IRFR1018ETRPBF vs IRFR3806TRPBF 对比
详细并排对比 IRFR1018ETRPBF 出自 Infineon 和 IRFR3806TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR1018ETRPBF | IRFR3806TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.36 | $0.52 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) | 79 A (Tc) | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Rds(on) Max @ Vgs=10V | 8.4 mΩ | — |
| Rds(on) Max @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 46 nC | 22 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Maximum Power Dissipation (Pd) | 110 W (Tc) | — |
| 工作温度范围 | -55 °C to +175 °C | -55 C to +175 C |
| 封装 | TO-252AA (D-Pak) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET | HEXFET (IR MOSFET) |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 等级 | 1 | — |
| Avalanche Rated | Yes | Yes (HEXFET family) |
| Transistor Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 43 A |
| On-State Resistance RDS(on) max | — | 15.8 mOhm at VGS = 10 V |
| Power Dissipation (Pd) at Tc = 25 C | — | 71 W |
| 封装 / 外壳 | — | TO-252AA (DPAK) |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Number of Units in IC | — | 1 |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |