IRFR1018ETRPBF - 60V 79A 8.4mΩ N-Channel MOSFET | Infineon
料号： IRFR1018ETRPBF ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.74 | $0.74 |
| 10 | $0.66 | $6.60 |
| 100 | $0.55 | $55.00 |
| 500 | $0.48 | $240.00 |
| 1,000 | $0.42 | $420.00 |
| 2,500 | $0.36 | $900.00 |
IRFR1018ETRPBF 概述
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for switching and amplifying electronic signals. N-channel MOSFETs conduct when a positive gate-to-source voltage is applied, offering lower on-resistance per unit silicon area than equivalent P-channel devices. Power MOSFETs belong to the discrete semiconductor hierarchy and sit between signal-level transistors and higher-power IGBT modules in the power electronics stack.
Key features of the IRFR1018ETRPBF include a low typical Rds(on) of 8.4 mΩ at Vgs=10 V, a total gate charge (Qg) of 46 nC enabling fast switching transitions, and 110 W maximum power dissipation at 25 °C case temperature. The device also offers avalanche-rated ruggedness, a logic-level-compatible gate threshold range, and a low thermal-resistance DPAK package that supports high-current operation on FR-4 PCB with adequate copper pour.
Internally the IRFR1018E uses Infineon's HEXFET planar-cell technology, which optimises the trade-off between conduction loss, switching loss, and avalanche energy. The 60 V breakdown rating makes it well suited to 24 V bus telecom and industrial systems as well as 12 V automotive subsystems. The optimized body diode supports synchronous-rectifier topologies where the low-side MOSFET must conduct reverse current during freewheeling intervals.
Typical applications include secondary-side synchronous rectification in isolated DC-DC converters, low-voltage motor-drive H-bridges, solenoid and relay drivers, hot-swap controllers, battery protection circuits in power tools, and OR-ing FETs in redundant power systems. The 8.4 mΩ Rds(on) keeps conduction losses low even at 30-40 A continuous loads.
When designing with this part, ensure the gate-drive voltage comfortably exceeds the maximum threshold voltage (typically 4 V) across all temperature corners - a 10 V gate drive is recommended for full enhancement. Adequate PCB copper area is essential for heat extraction; without it the device will thermally limit well below its 79 A rating.
This page synthesises distributor pricing, drop-in DPAK alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single-source reference for sourcing and second-sourcing decisions.
直接替换替代料： IRFR1018ETRPBF ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IRFR1018ETRPBF （相同外形与封装尺寸） ——差异在于 Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS), Avalanche Rated.
快速对比工具——选择替代料号进行并排对比：
IRFR1018EPBF
✅ 直接替换📋 参考替代料（不在目录中）
AUIRFR1018E
✅ 直接替换📋 参考替代料（不在目录中）
IRFS4321TRLPBF
✅ 直接替换✓ 有现货
$1.73 / 个
查看数据手册 →IRFR5305TRPBF
✅ 直接替换✓ 有现货
$0.32 / 个
查看数据手册 →IRFR5410TRPBF
✅ 直接替换✓ 有现货
$0.71 / 个
查看数据手册 →SUD50N06-25L
✅ 直接替换📋 参考替代料（不在目录中）
BSC010NE2LSIATMA1
✅ 直接替换✓ 有现货
$0.92 / 个
查看数据手册 →BSC014N04LSIATMA1
✅ 直接替换✓ 有现货
$0.39 / 个
查看数据手册 →IRFR1018ETRPBF 最大额定值与电气特性
| FET Type | N-Channel |
| Drain-to-Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) | 79 A (Tc) |
| Rds(on) Max @ Vgs=10V | 8.4 mΩ |
| Gate Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 46 nC |
| Maximum Power Dissipation (Pd) | 110 W (Tc) |
| 工作温度范围 | -55 °C to +175 °C |
| 封装 | TO-252AA (D-Pak) |
| 安装类型 | Surface Mount |
| Technology | HEXFET |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
| MSL 等级 | 1 |
| Avalanche Rated | Yes |
IRFR1018ETRPBF 引脚配置
| 引脚 1 | Gate (G) — MOSFET gate control input; drive with 10V for full enhancement |
| 引脚 2 | Drain (D) / Tab — MOSFET drain connection; internally tied to the metal tab on the back of the package |
| 引脚 3 | Source (S) — MOSFET source connection; reference for gate drive |
IRFR1018ETRPBF 安全工作区 (DC)
典型应用
IRFR1018ETRPBF 适用于 7 应用s: 24V Industrial DC-DC Synchronous Rectifier, 12V Automotive Load Switch, Power Tool Battery Protection (BMS), Telecom 48V Hot-Swap Controller, Brushed DC Motor Drive H-Bridge, Solar Charge Controller MPPT Stage, Server OR-ing and Redundant Power.
24V Industrial DC-DC Synchronous Rectifier
The IRFR1018ETRPBF is widely used as the low-side synchronous rectifier MOSFET in isolated 24V-input DC-DC converters such as quarter-brick and eighth-brick modules. Its 60V Vdss rating provides ample headroom above 24V nominal (handles 36V transients on industrial buses per IEC 61131-2), and its 8.4mΩ Rds(on) keeps conduction loss below 1W at 20A output current. The 46nC total gate charge allows operation above 200kHz switching frequency without excessive driver loss. Compared to a Schottky diode, two IRFR1018ETRPBFs in a synchronous half-bridge configuration recover full voltage headroom and improve efficiency by 3-5 percentage points across the load range.
推荐
12V Automotive Load Switch
In automotive 12V body-electronics and chassis subsystems, the IRFR1018ETRPBF serves as a high-side or low-side load switch for lamps, solenoids, and motor loads drawing 20-50A peak. Its 60V breakdown withstands 24V jump-start events per ISO 7637-2 surge testing, and its 8.4mΩ Rds(on) minimises voltage drop across the switch. The -55°C to +175°C operating range covers under-hood temperature extremes, though for AEC-Q100 qualified designs the AUIRFR1018E variant is preferred. A single IRFR1018ETRPBF can replace a mechanical relay in many applications, providing silent operation, faster switching, and longer lifetime than electromechanical alternatives.
推荐
Power Tool Battery Protection (BMS)
Cordless drill, saw, and outdoor power tool battery management systems use the IRFR1018ETRPBF as the discharge control FET between the Li-ion pack and the motor. With 79A continuous current capability, it handles 18V/20V cordless tool peak loads up to 1500W without entering thermal shutdown at 25°C ambient with adequate copper. The low 8.4mΩ Rds(on) keeps voltage drop under 0.4V at 50A, preserving usable battery capacity. The HEXFET avalanche rating also protects against the inductive kickback from brushed motor commutators during turn-off, eliminating the need for a separate flyback diode in many designs.
推荐
Telecom 48V Hot-Swap Controller
Telecom -48V bus systems (with positive ground return) require an OR-ing or hot-swap MOSFET capable of interrupting inrush current when a new rectifier module is plugged into a live shelf. The IRFR1018ETRPBF handles this role: its 60V Vdss exceeds the 48V nominal bus with margin for transient ringing, and its 8.4mΩ Rds(on) minimises conduction loss on the high-current path. A single FET can pass 30A continuously in a 1U rectifier module. The fast switching of HEXFET technology enables sub-microsecond fault response, disconnecting a shorted module before upstream breakers trip.
推荐
Brushed DC Motor Drive H-Bridge
In brushed DC motor H-bridge drivers for industrial automation, robotics, and small EV traction, the IRFR1018ETRPBF provides the four switching FETs of the bridge. Each FET in the bridge must conduct motor current and block the back-EMF during PWM switching; the 60V breakdown and 79A continuous rating handle 24V/36V motor systems up to 2kW peak. The 46nC Qg permits PWM frequencies above 25kHz for smooth torque control without audible whine. The HEXFET body diode also acts as the freewheeling path during PWM off-time, simplifying gate-driver design versus parts requiring external Schottky clamps.
推荐
Solar Charge Controller MPPT Stage
Off-grid and grid-tied solar MPPT (Maximum Power Point Tracking) charge controllers use the IRFR1018ETRPBF as the switching element in buck or boost converters between the PV array and battery bus. Its 60V Vdss covers 24V PV strings with transient spike margin, and its 8.4mΩ Rds(on) enables 95%+ conversion efficiency at moderate switching frequencies (50-100kHz). The avalanche ruggedness of HEXFET technology also protects against the inductive kick from PV array wiring inductance during MPPT sweep operation. For higher-voltage 48V PV strings, the IRFS4321TRLPBF (150V variant) is preferred for additional breakdown headroom.
推荐
Server OR-ing and Redundant Power
Data centre server CRPS (Common Redundant Power Supply) modules use OR-ing MOSFETs at the output to combine multiple PSU rails into a single bus without diode losses. The IRFR1018ETRPBF suits 12V server output OR-ing: its 8.4mΩ Rds(on) keeps conduction loss under 0.5W at 60A load, vastly outperforming Schottky OR-ing diodes that would waste 7W. The 60V breakdown withstands hot-swap transients during PSU insertion. In this topology two IRFR1018ETRPBFs (one per PSU) provide reverse-current blocking, and the fast body diode enables sub-millisecond switchover between active PSUs during a fault.
推荐
推荐产品汇总
工程参考数据： IRFR1018ETRPBF ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IRFR1018EPBF | AUIRFR1018E | IRFS4321TRLPBF | SUD50N06-25L |
|---|---|---|---|---|---|
| Package | TO-252AA (D-Pak) | TO-252AA (D-Pak) - same | TO-252AA (D-Pak) - same | TO-252AA (D-Pak) - same | TO-252AA (D-Pak) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Vishay Intertechnology |
| Drain-to-Source Voltage (Vdss) | 60 V | 60 V | 60 V | 150 V | 60 V |
| Continuous Drain Current (Id) | 79 A | 79 A | 79 A | 85 A | 50 A |
| Rds(on) Max @ Vgs=10V | 8.4 mΩ | 8.4 mΩ | 8.4 mΩ | 5.9 mΩ | 25 mΩ |
| Power Dissipation (Pd) | 110 W | 110 W | 110 W | 330 W | 71 W |
| Automotive Qualified | No | No | Yes (AEC-Q101) | No | No |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
关键差异点
- Tape-and-reel packaging for high-volume assembly （对比 IRFR1018EPBF)
- AEC-Q101 automotive qualification in same package （对比 AUIRFR1018E)
- Optimised 60V/8.4mΩ sweet spot for 24V bus systems （对比 IRFS4321TRLPBF)
- Avalanche-rated ruggedness vs generic 60V FETs （对比 SUD50N06-25L)
设计说明
The TO-252AA (D-Pak) package relies on the PCB copper as its primary heatsink. For continuous operation at currents above 30A, use at least 1 square inch of 2oz copper on the drain tab landing pad, with thermal vias to internal copper planes. Estimated: with the standard 1 sq inch FR-4 footprint, RθJA is approximately 50 °C/W, limiting continuous drain current to about 25A at 25°C ambient with Tj max=175°C. Without adequate copper, the device will thermally limit well below its 79A datasheet rating.
Minimise parasitic inductance in the high-current switching loop: place the FET close to the input bypass capacitors and use wide, short traces on the drain and source pads. The 46nC gate charge combined with even 20nH of source-inductance can produce gate-drive ringing above 20V peak, risking gate-oxide overstress. A small gate-source resistor (10-100Ω) close to the IC dampens the resonance. For switching frequencies above 100kHz, use Kelvin-source connection if the package allows, or add a small ferrite bead in the source lead.
The IRFR1018ETRPBF is NOT a logic-level MOSFET - while the gate threshold range (2.0-4.0V) allows operation from 5V microcontrollers, full enhancement requires Vgs≥10V to achieve the specified 8.4mΩ Rds(on). Driving with only 5V can result in 20-30mΩ Rds(on) at room temperature, doubling conduction loss. For 3.3V logic applications, choose a logic-level N-channel FET instead. Also avoid exceeding Vgs=±20V absolute maximum - even brief overshoot from gate-drive ringing can damage the gate oxide.
Solder paste stencil aperture should be 1:1 with the DPAK tab landing pad to ensure proper thermal-mechanical connection - the tab carries both electrical drain current and most of the heat. Insufficient solder under the tab causes high thermal resistance and mechanical stress failures during thermal cycling. Follow IPC-7530 guidelines for pad geometry and reflow profile (peak temperature 245-260°C, 60s above 220°C for lead-free SAC305 paste). MSL Level 1 means floor-life is unlimited at ≤30°C/85% RH, simplifying handling in production.
The IRFR1018ETRPBF's HEXFET technology provides good EMI performance for SMPS applications, but at high di/dt (>1A/ns) the body-diode reverse recovery can cause significant switching loss and noise. For hard-switched bridge topologies, an RC snubber (typically 10Ω + 1nF) across the drain-source can limit peak ringing voltage and reduce EMI by 10-15dB. For zero-voltage-switching (ZVS) topologies, the body diode is reverse-biased before conduction, eliminating recovery losses entirely.
合规信息
RoHS and REACH compliant per Infineon product page. Standard grade - not AEC-Q100 qualified; choose AUIRFR1018E for automotive. MSL Level 1 per JEDEC J-STD-020. Lead-free (SAC305) reflow compatible.
