IRFR220NTRLPBF vs IRFR4620TRLPBF 对比

详细并排对比 IRFR220NTRLPBF 出自 Infineon 和 IRFR4620TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF ✓ 量产中

规格对比

参数 IRFR220NTRLPBF IRFR4620TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.22 $1.72
Polarity N-Channel —
Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 200 V —
Continuous Drain Current (Id) at Tc=25C 5 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance (RDS(on)) 0.800 ohm (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
Gate-to-Drain Charge (Qgd) Low (per datasheet - HEXFET design) —
Power Dissipation (Pd) at Tc=25C 43 W —
工作温度范围 -55C to +150C (junction) —
封装 TO-252AA (DPAK), 2 Leads + Tab, SC-63 —
安装类型 Surface Mount Surface Mount
MSL 等级 1 1 (Unlimited)
RoHS 状态 Compliant (Pb-free PBF suffix) Compliant
Packaging Tape & Reel (Left orientation - TRLPBF) —
Avalanche Rated Yes (HEXFET ruggedized design) —
Technology Family HEXFET, Planar, Generation 3 —
Manufacturer — Infineon Technologies
Part Number — IRFR4620TRLPBF
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) — 24 A at Tc
On-Resistance (RDS(on)) — 78 mOhm max at VGS=10V
Gate Charge (Qg) — 25 nC typical
Power Dissipation (PD) — 144 W at Tc
Technology — IR MOSFET
封装 / 外壳 — TO-252AA (DPAK)
工作温度 — -55C to +175C
Lead Free — Yes

数据手册与资源

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