IRFR3710ZTRPBF vs IRLR3410TRPBF 对比

详细并排对比 IRFR3710ZTRPBF 出自 Infineon 和 IRLR3410TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR3710ZTRPBF IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF ✓ 量产中

规格对比

参数 IRFR3710ZTRPBF IRLR3410TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.42 $0.81
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 56 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm —
Power Dissipation (PD) at TC=25C 140 W —
工作结温 -55C to +175C —
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET, 5th generation)
封装 TO-252AA (DPAK) TO-252AA (DPAK), surface mount
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant —
Lead-Free Yes —
Drain-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) at Tc=25C — 17 A
Power Dissipation (Pd) at Tc=25C — 79 W
On-Resistance RDS(on) max — 105 mOhm
Gate Threshold Voltage Vgs(th) — Logic-level (drive ~4.5V)
Total Gate Charge (Qg) — 22.7 nC
工作温度范围 — -55C to +175C (junction)
Lead-Free / RoHS — Yes (PBF suffix)
MSL 等级 — 1 (unlimited floor life at <30C/85% RH)
Drain Tab Connection — Tab electrically tied to Drain
Polarity — N-Channel enhancement mode

数据手册与资源

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