IRFR4615TRLPBF vs IRF150P220AKMA1 对比

详细并排对比 IRFR4615TRLPBF 出自 Infineon 和 IRF150P220AKMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ 量产中

规格对比

参数 IRFR4615TRLPBF IRF150P220AKMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.39 $3.55
Technology IR MOSFET (N-Channel Enhancement Mode) StrongIRFET
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at TC=25C 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
On-Resistance RDS(on) max at VGS=10V 42 mOhm —
Total Gate Charge (Qg) 26 nC —
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Power Dissipation (PD) at TC=25C 144 W —
Avalanche Energy (EAS) 109 mJ —
工作温度范围 -55C to +175C -55C to +175C
封装 TO-252AA (DPAK) TO-247-3 (PG-TO247-3)
安装类型 Surface Mount Through Hole
Lead-Free / RoHS Yes (PBF suffix indicates Pb-free) —
单脉冲雪崩能量 109 mJ —
Manufacturer — Infineon Technologies
Part Number — IRF150P220AKMA1
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS max) — 150 V
Continuous Drain Current (ID) at Tc=25C — 203 A
On-Resistance (RDS(on) max) at VGS=10V — 2.7 mOhm
Gate-Source Voltage (VGS max) — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typ]
Power Dissipation (Pd) at Tc=25C — 556 W
Power Dissipation (Pd) at Ta=25C — 3.8 W
Terminal Finish — Tin (Sn)
JESD-609 Code — e3
RoHS 状态 — Compliant
Lead-Free — Yes

数据手册与资源

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