IRFR540ZTRPBF vs IRFR3710ZTRPBF 对比
详细并排对比 IRFR540ZTRPBF 出自 Infineon 和 IRFR3710ZTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR540ZTRPBF | IRFR3710ZTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.32 | $0.42 |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) | 35 A (at Tc) | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance Rds(on) Max | 28.5 mOhm at Vgs=10V | — |
| Gate-Source Threshold Vgs(th) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) | 39 nC | — |
| Power Dissipation (Pd) | 91 W (at Tc) | — |
| 工作温度范围 | -55 C to +175 C (junction) | — |
| 封装 | TO-252AA (DPAK) surface mount | TO-252AA (DPAK) |
| Technology | IR MOSFET | HEXFET (IR MOSFET) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| MSL 等级 | 1 (unlimited floor life at <30 C / 85% RH) | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Automotive Qualified | Yes (AEC-Q101) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 18 mOhm |
| Power Dissipation (PD) at TC=25C | — | 140 W |
| 工作结温 | — | -55C to +175C |
| Lead-Free | — | Yes |