IRFR540ZTRPBF vs IRFR540ZTRLPBF 对比

详细并排对比 IRFR540ZTRPBF 出自 Infineon 和 IRFR540ZTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR540ZTRPBF IRFR540ZTRPBF - 100V N-Ch MOSFET, 35A, DPAK | Infineon

IRFR540ZTRPBF - 100V N-Ch MOSFET, 35A, DPAK | Infineon

IRFR540ZTRPBF ✓ 量产中
Infineon
IRFR540ZTRLPBF IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF ✓ 量产中

规格对比

参数 IRFR540ZTRPBF IRFR540ZTRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.32 $0.82
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) 35 A (at Tc) —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) Max 28.5 mOhm at Vgs=10V —
Gate-Source Threshold Vgs(th) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) 39 nC 39 nC
Power Dissipation (Pd) 91 W (at Tc) —
工作温度范围 -55 C to +175 C (junction) —
封装 TO-252AA (DPAK) surface mount TO-252AA (DPAK) surface mount
Technology IR MOSFET IR MOSFET™ / HEXFET®
安装类型 Surface Mount Surface Mount
引脚数量 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
MSL 等级 1 (unlimited floor life at <30 C / 85% RH) —
RoHS 状态 Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Automotive Qualified Yes (AEC-Q101) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC — 35 A
Pulsed Drain Current (IDM) — 110 A
Static Drain-Source On-Resistance (RDS(on)) — 28.5 mΩ max at VGS=10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical V]
Power Dissipation (PD) at TC — 91 W
工作结温 — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes (PBF suffix)
Packaging — Tape & Reel (TR-L), 800-piece leader/trailer

数据手册与资源

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