IRFR540ZTRPBF vs IRFR540ZTRLPBF 비교

다음의 상세 나란히 비교: IRFR540ZTRPBF 제조: Infineon 및 IRFR540ZTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IRFR540ZTRPBF IRFR540ZTRPBF - 100V N-Ch MOSFET, 35A, DPAK | Infineon

IRFR540ZTRPBF - 100V N-Ch MOSFET, 35A, DPAK | Infineon

IRFR540ZTRPBF ✓ 활성
Infineon
IRFR540ZTRLPBF IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF ✓ 활성

사양 비교

파라미터 IRFR540ZTRPBF IRFR540ZTRLPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.32 $0.82
트랜지스터 유형 N-Channel MOSFET —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) 35 A (at Tc) —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) Max 28.5 mOhm at Vgs=10V —
Gate-Source Threshold Vgs(th) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) 39 nC 39 nC
Power Dissipation (Pd) 91 W (at Tc) —
동작 온도 범위 -55 C to +175 C (junction) —
패키지 TO-252AA (DPAK) surface mount TO-252AA (DPAK) surface mount
Technology IR MOSFET IR MOSFET™ / HEXFET®
실장 유형 Surface Mount Surface Mount
핀 수 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
MSL 레벨 1 (unlimited floor life at <30 C / 85% RH) —
RoHS 상태 Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Automotive Qualified Yes (AEC-Q101) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC — 35 A
Pulsed Drain Current (IDM) — 110 A
Static Drain-Source On-Resistance (RDS(on)) — 28.5 mΩ max at VGS=10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical V]
Power Dissipation (PD) at TC — 91 W
동작 접합 온도 — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes (PBF suffix)
Packaging — Tape & Reel (TR-L), 800-piece leader/trailer

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