IRFR5410TRPBF vs IPD042P03L3GATMA1 对比
详细并排对比 IRFR5410TRPBF 出自 Infineon 和 IPD042P03L3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR5410TRPBF | IPD042P03L3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.71 | $0.28 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | -30 V |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) typ | 70 nC | — |
| 封装 | TO-252AA (DPAK), surface mount | PG-TO252-3 (DPAK) |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| 工作温度范围 | -55 °C to +150 °C (TJ) | -55°C to +175°C (TJ) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | OptiMOS™ P (Trench) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| Continuous Drain Current (ID, Tc=25°C) | — | -70 A |
| Pulsed Drain Current (IDM) | — | -280 A |
| RDS(on) max @ VGS = -10 V | — | 4.2 mΩ |
| RDS(on) max @ VGS = -4.5 V | — | [DATA_NEEDED: RDS(on) @ -4.5 V] |
| Gate Threshold Voltage (VGS(th)) | — | -1.5 V (typ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (PD @ Tc=25°C) | — | 150 W |
| Single-Pulse Avalanche Energy (EAS) | — | 290 mJ |
| RoHS 状态 | — | Compliant |