IRFR5410TRPBF vs IPD042P03L3GATMA1 Comparison
Detailed side-by-side comparison of IRFR5410TRPBF by Infineon and IPD042P03L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR5410TRPBF | IPD042P03L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.28 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | -30 V |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) typ | 70 nC | — |
| Package | TO-252AA (DPAK), surface mount | PG-TO252-3 (DPAK) |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| Operating Temperature Range | -55 °C to +150 °C (TJ) | -55°C to +175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | OptiMOS™ P (Trench) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| Continuous Drain Current (ID, Tc=25°C) | — | -70 A |
| Pulsed Drain Current (IDM) | — | -280 A |
| RDS(on) max @ VGS = -10 V | — | 4.2 mΩ |
| RDS(on) max @ VGS = -4.5 V | — | [DATA_NEEDED: RDS(on) @ -4.5 V] |
| Gate Threshold Voltage (VGS(th)) | — | -1.5 V (typ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (PD @ Tc=25°C) | — | 150 W |
| Single-Pulse Avalanche Energy (EAS) | — | 290 mJ |
| RoHS Status | — | Compliant |