IRFR5410TRRPBF vs IPD50P04P4L11ATMA2 对比
详细并排对比 IRFR5410TRRPBF 出自 Infineon 和 IPD50P04P4L11ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR5410TRRPBF | IPD50P04P4L11ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.49 | $0.82 |
| Polarity | P-Channel | — |
| FET Type | MOSFET (Metal Oxide Semiconductor) | — |
| Technology | HEXFET (5th Generation) | — |
| VDS (Drain-Source Voltage) | -100 V | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Gate Threshold) | -2 V to -4 V | — |
| Continuous Drain Current (ID) at Tc=25C | -13 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max at VGS=-10V | 205 mΩ | — |
| RDS(on) typical at VGS=-10V | 26 mΩ (per Mouser listing for IRFR5410TRPBF) | — |
| Total Gate Charge (Qg) | 70 nC | — |
| Power Dissipation (Pd) at Tc=25C | 66 W | — |
| 工作结温 | -55C to +150C | -55 °C to +175 °C |
| 封装 | TO-252AA (DPAK) | PG-TO252-3-313 (DPAK), surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| 晶体管类型 | — | P-Channel MOSFET, enhancement mode |
| Drain-Source Voltage VDS | — | -40 V |
| Continuous Drain Current ID (TC = 25 °C) | — | -50 A |
| On-State Resistance RDS(on) (VGS = -10 V) | — | 10.6 mΩ typical |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) | — | -1.0 V to -2.5 V typical |
| Typical Gate Charge Qg | — | 45 nC |
| Power Dissipation PD (TC = 25 °C) | — | 58 W |
| 引脚数量 | — | 3 (Drain / Tab / Source / Gate) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |