IRFR5410TRRPBF vs IPD50P04P4L11ATMA2 비교
다음의 상세 나란히 비교: IRFR5410TRRPBF 제조: Infineon 및 IPD50P04P4L11ATMA2 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR5410TRRPBF | IPD50P04P4L11ATMA2 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.49 | $0.82 |
| Polarity | P-Channel | — |
| FET Type | MOSFET (Metal Oxide Semiconductor) | — |
| Technology | HEXFET (5th Generation) | — |
| VDS (Drain-Source Voltage) | -100 V | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Gate Threshold) | -2 V to -4 V | — |
| Continuous Drain Current (ID) at Tc=25C | -13 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max at VGS=-10V | 205 mΩ | — |
| RDS(on) typical at VGS=-10V | 26 mΩ (per Mouser listing for IRFR5410TRPBF) | — |
| Total Gate Charge (Qg) | 70 nC | — |
| Power Dissipation (Pd) at Tc=25C | 66 W | — |
| 동작 접합 온도 | -55C to +150C | -55 °C to +175 °C |
| 패키지 | TO-252AA (DPAK) | PG-TO252-3-313 (DPAK), surface mount |
| 실장 유형 | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| 트랜지스터 유형 | — | P-Channel MOSFET, enhancement mode |
| Drain-Source Voltage VDS | — | -40 V |
| Continuous Drain Current ID (TC = 25 °C) | — | -50 A |
| On-State Resistance RDS(on) (VGS = -10 V) | — | 10.6 mΩ typical |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) | — | -1.0 V to -2.5 V typical |
| Typical Gate Charge Qg | — | 45 nC |
| Power Dissipation PD (TC = 25 °C) | — | 58 W |
| 핀 수 | — | 3 (Drain / Tab / Source / Gate) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |