IRFR5505TRLPBF vs IRFR024NTRPBF 对比

详细并排对比 IRFR5505TRLPBF 出自 Infineon 和 IRFR024NTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR5505TRLPBF IRFR5505TRLPBF - P-Ch 55V 18A 110mOhm DPAK MOSFET | Infineon

IRFR5505TRLPBF - P-Ch 55V 18A 110mOhm DPAK MOSFET | Infineon

IRFR5505TRLPBF ✓ 量产中
Infineon
IRFR024NTRPBF IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF ✓ 量产中

规格对比

参数 IRFR5505TRLPBF IRFR024NTRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.38 $0.31
Polarity P-Channel —
MOSFET Operating Mode Enhancement —
VDS (Drain-Source Voltage) -55 V —
VGS (Gate-Source Voltage) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) -18 A (Tc) 17 A (at TC = 25 C)
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 60 A
On-Resistance RDS(on) max 110 mOhm (VGS = -10 V) —
Total Gate Charge (Qg) 21.3 nC —
Power Dissipation (PD) 57 W (Tc = 25 °C) —
工作温度范围 -55 °C to +175 °C —
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC] —
Technology IR MOSFET™ (HEXFET® generation 5) —
封装 TO-252AA (DPAK), surface mount TO-252-3 (DPAK, SC-63), surface mount
安装类型 Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) —
MSL 等级 1 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Series — HEXFET Power MOSFET (5th generation)
晶体管类型 — N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) — 55 V
On-Resistance (RDS(on)) — 75 mOhm max (at VGS = 10 V)
Gate-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Typical Gate Charge (Qg) — 13.3 nC
Total Power Dissipation (PD) — 45 W (at TC = 25 C)
工作结温 — -55 C to +175 C
Packaging — Tape and Reel (TR)
RoHS Compliance — Compliant (Pb-free / PbF terminations)

数据手册与资源

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