IRFR7540TRPBF vs IRFH5015TRPBF 对比

详细并排对比 IRFR7540TRPBF 出自 Infineon 和 IRFH5015TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFH5015TRPBF IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon

IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon

IRFH5015TRPBF ✓ 量产中

规格对比

参数 IRFR7540TRPBF IRFH5015TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.62
FET Type N-Channel N-Channel
Technology StrongIRFET™ (HEXFET) IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) 60 V 150 V
Continuous Drain Current (ID) at TC=25°C 90 A —
Pulsed Drain Current (IDM) 110 A (limited by TJmax) —
Power Dissipation (PD) at TC=25°C 140 W —
RDS(on) max at VGS=10V 4.8 mΩ —
RDS(on) typical at 100µA VGS 3.7 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 3.7 V typical —
工作温度范围 -55°C to +175°C (TJ max) —
封装 TO-252AA (DPAK) Surface Mount 8-PQFN (5x6) SuperSO8
安装类型 Surface Mount Surface Mount
MSL 等级 1 —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Continuous Drain Current (ID) at TA=25C — 10 A
Continuous Drain Current (ID) at TC=25C — 56 A
On-Resistance (RDS(on)) max — 31 mOhm
Total Gate Charge (Qg) — 33 nC
Power Dissipation (TA=25C) — 3.6 W
Power Dissipation (TC=25C) — 156 W
Gate Drive Voltage (VGS recommended) — 10 V
Configuration — Single with built-in body diode
工作温度 — -55C to +150C (TJ max)

数据手册与资源

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