IRFR7540TRPBF vs IRFH5015TRPBF Comparison

Detailed side-by-side comparison of IRFR7540TRPBF by Infineon and IRFH5015TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFH5015TRPBF

IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon

IRFH5015TRPBF ✓ Active

Specification Comparison

Parameter IRFR7540TRPBF IRFH5015TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.62
FET Type N-Channel N-Channel
Technology StrongIRFET™ (HEXFET) IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) 60 V 150 V
Continuous Drain Current (ID) at TC=25°C 90 A
Pulsed Drain Current (IDM) 110 A (limited by TJmax)
Power Dissipation (PD) at TC=25°C 140 W
RDS(on) max at VGS=10V 4.8 mΩ
RDS(on) typical at 100µA VGS 3.7 mΩ
Gate-Source Voltage (VGS) max ±20 V
Gate Threshold Voltage (VGS(th)) 3.7 V typical
Operating Temperature Range -55°C to +175°C (TJ max)
Package TO-252AA (DPAK) Surface Mount 8-PQFN (5x6) SuperSO8
Mounting Type Surface Mount Surface Mount
MSL Level 1
RoHS Status Compliant Compliant
Lead-Free Yes
Continuous Drain Current (ID) at TA=25C 10 A
Continuous Drain Current (ID) at TC=25C 56 A
On-Resistance (RDS(on)) max 31 mOhm
Total Gate Charge (Qg) 33 nC
Power Dissipation (TA=25C) 3.6 W
Power Dissipation (TC=25C) 156 W
Gate Drive Voltage (VGS recommended) 10 V
Configuration Single with built-in body diode
Operating Temperature -55C to +150C (TJ max)

Datasheets & Resources

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