IRFS3306PBF vs IRFB3207ZPBF 对比
详细并排对比 IRFS3306PBF 出自 Infineon 和 IRFB3207ZPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFS3306PBF | IRFB3207ZPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.28 | $1.62 |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 120 A (package limited) | — |
| Continuous Drain Current (ID, silicon limited) | 160 A | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.2 mOhm | 4.1 mOhm |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | 3.3 mOhm |
| Total Gate Charge (Qg) typ | 85 nC | — |
| Gate-to-Drain Charge (Qgd) typ | [DATA_NEEDED: Qgd nominal value] | — |
| Power Dissipation (Pd) max @ Tc=25C | 230 W | — |
| 工作结温 | -55C to +175C | -55 C to +175 C |
| 封装 | D2PAK (TO-263AB) surface mount | TO-220AB (3-lead through-hole) |
| 安装类型 | Surface Mount | Through Hole |
| MSL 等级 | 1 (per JEDEC J-STD-020) | N/A (through-hole) |
| Lead-Free / RoHS | PbF (lead-free), RoHS compliant | Yes (PBF suffix = lead-free) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |