IRFS3306PBF vs IRFB3207ZPBF Comparaison
Comparaison détaillée côte à côte de IRFS3306PBF par Infineon et IRFB3207ZPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFS3306PBF | IRFB3207ZPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,28 | $1,62 |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 120 A (package limited) | — |
| Continuous Drain Current (ID, silicon limited) | 160 A | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.2 mOhm | 4.1 mOhm |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | 3.3 mOhm |
| Total Gate Charge (Qg) typ | 85 nC | — |
| Gate-to-Drain Charge (Qgd) typ | [DATA_NEEDED: Qgd nominal value] | — |
| Power Dissipation (Pd) max @ Tc=25C | 230 W | — |
| Température de jonction en fonctionnement | -55C to +175C | -55 C to +175 C |
| Boîtier | D2PAK (TO-263AB) surface mount | TO-220AB (3-lead through-hole) |
| Type de montage | Surface Mount | Through Hole |
| Niveau MSL | 1 (per JEDEC J-STD-020) | N/A (through-hole) |
| Lead-Free / RoHS | PbF (lead-free), RoHS compliant | Yes (PBF suffix = lead-free) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |