IRFS3306PBF vs IRFB3207ZPBF Comparación
Comparación detallada lado a lado de IRFS3306PBF por Infineon y IRFB3207ZPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFS3306PBF | IRFB3207ZPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,28 | $1,62 |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 120 A (package limited) | — |
| Continuous Drain Current (ID, silicon limited) | 160 A | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.2 mOhm | 4.1 mOhm |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | 3.3 mOhm |
| Total Gate Charge (Qg) typ | 85 nC | — |
| Gate-to-Drain Charge (Qgd) typ | [DATA_NEEDED: Qgd nominal value] | — |
| Power Dissipation (Pd) max @ Tc=25C | 230 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55 C to +175 C |
| Encapsulado | D2PAK (TO-263AB) surface mount | TO-220AB (3-lead through-hole) |
| Tipo de montaje | Surface Mount | Through Hole |
| Nivel MSL | 1 (per JEDEC J-STD-020) | N/A (through-hole) |
| Lead-Free / RoHS | PbF (lead-free), RoHS compliant | Yes (PBF suffix = lead-free) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |