IRFU5305PBF vs IRF5305STRLPBF 对比

详细并排对比 IRFU5305PBF 出自 Infineon 和 IRF5305STRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF ✓ 量产中

规格对比

参数 IRFU5305PBF IRF5305STRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.68 $0.92
Polarity P-Channel —
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID) at Tc -31 A —
Pulsed Drain Current (IDM) -110 A (pulsed) —
On-Resistance RDS(on) max @ VGS=-10V 65 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Total Gate Charge (Qg) 42 nC (typical) 42 nC (Mouser listing) / 63 nC (Future Electronics listing)
Power Dissipation (PD) at Tc=25°C 110 W —
工作结温 -55 °C to +175 °C —
Thermal Resistance Junction-to-Case (RθJC) 1.36 °C/W —
Thermal Resistance Junction-to-Ambient (RθJA) 62 °C/W —
封装 IPAK (TO-251AA) Through-Hole, 3 pins TO-263 / D2PAK (surface mount)
安装类型 Through Hole Surface Mount
Avalanche Rated Yes (EAS rated) —
RoHS Compliance Compliant —
Polarity / Channel Type — P-Channel
Continuous Drain Current (ID) at TC=25C — -31 A
Continuous Drain Current (ID) at TA=25C — [DATA_NEEDED: ID at TA=25C]
RDS(on) max at VGS=-10V — 60 mOhm
RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typ]
Maximum Power Dissition at Tc — 110 W
Maximum Power Dissipation at TA — 3.8 W
工作温度范围 — [DATA_NEEDED: Tj max / operating range]
Technology — HEXFET (fifth generation), IR MOSFET
Packaging — Tape & Reel (TR), 800 pcs per reel
Lead-Free / RoHS — Yes (Pb-free suffix PBF)

数据手册与资源

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