IRFU5305PBF vs IRF5305STRLPBF 비교

다음의 상세 나란히 비교: IRFU5305PBF 제조: Infineon 및 IRF5305STRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF ✓ 활성

사양 비교

파라미터 IRFU5305PBF IRF5305STRLPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.68 $0.92
Polarity P-Channel —
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID) at Tc -31 A —
Pulsed Drain Current (IDM) -110 A (pulsed) —
On-Resistance RDS(on) max @ VGS=-10V 65 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Total Gate Charge (Qg) 42 nC (typical) 42 nC (Mouser listing) / 63 nC (Future Electronics listing)
Power Dissipation (PD) at Tc=25°C 110 W —
동작 접합 온도 -55 °C to +175 °C —
Thermal Resistance Junction-to-Case (RθJC) 1.36 °C/W —
Thermal Resistance Junction-to-Ambient (RθJA) 62 °C/W —
패키지 IPAK (TO-251AA) Through-Hole, 3 pins TO-263 / D2PAK (surface mount)
실장 유형 Through Hole Surface Mount
Avalanche Rated Yes (EAS rated) —
RoHS Compliance Compliant —
Polarity / Channel Type — P-Channel
Continuous Drain Current (ID) at TC=25C — -31 A
Continuous Drain Current (ID) at TA=25C — [DATA_NEEDED: ID at TA=25C]
RDS(on) max at VGS=-10V — 60 mOhm
RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typ]
Maximum Power Dissition at Tc — 110 W
Maximum Power Dissipation at TA — 3.8 W
동작 온도 범위 — [DATA_NEEDED: Tj max / operating range]
Technology — HEXFET (fifth generation), IR MOSFET
Packaging — Tape & Reel (TR), 800 pcs per reel
Lead-Free / RoHS — Yes (Pb-free suffix PBF)

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