IRFZ44NPBF vs IRF5210PBF 对比
详细并排对比 IRFZ44NPBF 出自 Infineon 和 IRF5210PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFZ44NPBF | IRF5210PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.65 | $0.82 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 49 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | +/- 20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 17.5 mOhm | — |
| Total Gate Charge (Qg) | 42 nC | 120 nC |
| Power Dissipation (PD) at Tc=25C | 94 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 62 C/W | — |
| 工作结温 | -55C to +175C | — |
| 封装 | TO-220AB (3-pin + tab) | TO-220AB (through-hole) |
| 安装类型 | Through Hole | Through Hole |
| Technology | HEXFET (Advanced Process) | HEXFET (Fifth Generation) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS rating] | — |
| RoHS 状态 | Compliant | — |
| 晶体管类型 | — | P-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | -100 V |
| Continuous Drain Current (Id) at Tc | — | -40 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Threshold Voltage (Vgs(th)) | — | -2 V to -4 V (typical -2 V) |
| On-Resistance Rds(on) at Vgs=-10V | — | 60 milliohms |
| Power Dissipation (Pd) at Tc | — | 200 W |
| 工作温度范围 | — | -55 C to +175 C (junction) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Tab Connection | — | Electrically tied to Drain |
| Pin Configuration | — | Gate / Drain (tab) / Source (G-D-S, front view) |