IRLML2060TRPBF vs BSR802NL6327HTSA1 对比
详细并排对比 IRLML2060TRPBF 出自 Infineon 和 BSR802NL6327HTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLML2060TRPBF | BSR802NL6327HTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.13 | $0.15 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | — |
| Pulsed Drain Current (IDM) | 4.8 A | — |
| Gate-to-Source Voltage (VGS) max | +/- 12 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.8 V typical | [DATA_NEEDED: VGS(th) typical value] |
| RDS(on) max at VGS=10V | 480 mOhm | — |
| RDS(on) max at VGS=4.5V | 650 mOhm (typical 580 mOhm) | — |
| Power Dissipation (PD) at TA=25C | 1.25 W | — |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | 100 C/W | — |
| 工作结温 | -55C to +150C | -55C to +150C |
| 封装 | SOT-23 (Micro3, 3-pin) | PG-SC59-3 (SC-59 / SOT-346) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | IR HEXFET (Trench Gate) | OptiMOS 2 (N-Channel Trench MOSFET) |
| RoHS 状态 | Compliant | Compliant |
| 无卤 | Yes | — |
| MSL 等级 | MSL1 | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR802NL6327HTSA1 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 20 V |
| Continuous Drain Current (ID) max | — | 3.7 A (Ta=25C) |
| Power Dissipation (PD) max | — | 500 mW (Ta=25C) |
| On-Resistance (RDS(on)) typ | — | 23 mOhm @ VGS=4.5 V |
| Qualification | — | Automotive |
| 引脚数量 | — | 3 |