IRLML6346TRPBF vs IRLML2030TRPBF 对比
详细并排对比 IRLML6346TRPBF 出自 Infineon 和 IRLML2030TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLML6346TRPBF | IRLML2030TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.18 | $0.14 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 3.4 A (TA=25C) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max @ VGS=2.5V | 63 mOhm | — |
| RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Drive Capability | 2.5V logic-level | — |
| Maximum Power Dissipation (PD) | 1.3 W (TA=25C, 1in2 FR4) | — |
| 工作结温 | -55C to +150C | — |
| 封装 | Micro3 / SOT-23 | Micro3 (SOT-23) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | HEXFET (IR MOSFET) |
| MSL 等级 | 1 | MSL 1 |
| Lead-Free Finish | Yes (PBF suffix) | — |
| RoHS 状态 | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRLML2030TRPBF |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 2.7 A |
| Power Dissipation (PD) at Ta | — | 1.3 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 100 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | 154 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Charge (Qg) typ | — | 1.0 nC |
| 工作温度 | — | -55C to +150C (junction) |
| RoHS Compliance | — | Yes (lead-free, halogen-free) |
| Qualification | — | JEDEC standard |
| Soldering | — | Wave-solder compatible |