IRLR2705TRLPBF vs IRLR2905TRPBF 对比
详细并排对比 IRLR2705TRLPBF 出自 Infineon 和 IRLR2905TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLR2705TRLPBF | IRLR2905TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.32 | $0.61 |
| 晶体管类型 | N-Channel MOSFET (HexFET) | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 28 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 40 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (logic-level) | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Power Dissipation (PD) at TC=25C | 68 W | — |
| 工作温度范围 | -55C to +175C | — |
| 封装 | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| Technology | IR MOSFET (HEXFET, 5th generation) | HEXFET (IR MOSFET, fifth generation) |
| Configuration | Single N-Channel | — |
| MSL 等级 | 1 (unlimited floor life at <30C / 85% RH) | [DATA_NEEDED: MSL rating] |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | — | 27 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | — | 32 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| 工作结温 | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes / Compliant |
| Gate Drive | — | Logic-level compatible |