IRLR2908TRPBF vs IRLR3114ZTRPBF 对比

详细并排对比 IRLR2908TRPBF 出自 Infineon 和 IRLR3114ZTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRLR2908TRPBF IRLR3114ZTRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.55 $0.46
晶体管类型 N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (Vds) 80 V —
Continuous Drain Current (Id) at Tc=25C 30 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm pulsed value] —
On-Resistance RDS(on) max @ Vgs=10V 28 mOhm —
On-Resistance RDS(on) typ @ Vgs=10V 22.5 mOhm —
Gate Charge (Qg) typ 22 nC —
Power Dissipation (Pd) at Tc=25C 120 W —
工作结温 -55C to +175C -55 C to +175 C
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) range] —
封装 TO-252AA (DPAK), surface mount TO-252AA (DPAK) surface mount
安装类型 Surface Mount Surface Mount
Configuration Single with built-in diode —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25 C) — 42 A
Continuous Drain Current (ID, Tc=100 C) — 30 A
Pulsed Drain Current (IDM) — 130 A
Gate-Source Voltage (VGS) max — 16 V
Gate Threshold Voltage (VGS(th)) — 2.5 V (typ)
On-Resistance RDS(on) max @ VGS=10V — 4.5 mOhm
On-Resistance RDS(on) @ VGS=4.5V — 4.9 mOhm
Total Gate Charge (Qg) — 40 nC @ VGS=4.5 V
Input Capacitance (Ciss) — 3.81 nF
Power Dissipation (Pd, Tc=25 C) — 140 W
引脚数 — 3 (2 + tab)
RoHS 状态 — Compliant

数据手册与资源

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