IRLR2908TRPBF vs IRLR3114ZTRPBF Comparison

Detailed side-by-side comparison of IRLR2908TRPBF by Infineon and IRLR3114ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLR2908TRPBF IRLR3114ZTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $0.46
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (Vds) 80 V β€”
Continuous Drain Current (Id) at Tc=25C 30 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm pulsed value] β€”
On-Resistance RDS(on) max @ Vgs=10V 28 mOhm β€”
On-Resistance RDS(on) typ @ Vgs=10V 22.5 mOhm β€”
Gate Charge (Qg) typ 22 nC β€”
Power Dissipation (Pd) at Tc=25C 120 W β€”
Operating Junction Temperature -55C to +175C -55 C to +175 C
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) range] β€”
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK) surface mount
Mounting Type Surface Mount Surface Mount
Configuration Single with built-in diode β€”
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) β€”
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID, Tc=25 C) β€” 42 A
Continuous Drain Current (ID, Tc=100 C) β€” 30 A
Pulsed Drain Current (IDM) β€” 130 A
Gate-Source Voltage (VGS) max β€” 16 V
Gate Threshold Voltage (VGS(th)) β€” 2.5 V (typ)
On-Resistance RDS(on) max @ VGS=10V β€” 4.5 mOhm
On-Resistance RDS(on) @ VGS=4.5V β€” 4.9 mOhm
Total Gate Charge (Qg) β€” 40 nC @ VGS=4.5 V
Input Capacitance (Ciss) β€” 3.81 nF
Power Dissipation (Pd, Tc=25 C) β€” 140 W
Number of Pins β€” 3 (2 + tab)
RoHS Status β€” Compliant

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