IRLR3110ZTRPBF vs IRFR4615TRLPBF 对比
详细并排对比 IRLR3110ZTRPBF 出自 Infineon 和 IRFR4615TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLR3110ZTRPBF | IRFR4615TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.66 | $0.39 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 42 A | 33 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10V | 14 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | 15 nC | 26 nC |
| Power Dissipation (PD) at TC=25C | 140 W | 144 W |
| 工作结温 | -55C to +175C | — |
| 封装 | TO-252AA (DPAK) | TO-252AA (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET / Trench MOSFET | IR MOSFET (N-Channel Enhancement Mode) |
| MSL 等级 | 1 (Unlimited) | — |
| RoHS 状态 | Compliant | — |
| Lead-Free Plating | Yes (PBF suffix) | — |
| 无卤 | Yes | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Avalanche Energy (EAS) | — | 109 mJ |
| 工作温度范围 | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates Pb-free) |
| 单脉冲雪崩能量 | — | 109 mJ |