IRLR3110ZTRPBF vs IRFR4615TRLPBF Comparison
Detailed side-by-side comparison of IRLR3110ZTRPBF by Infineon and IRFR4615TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR3110ZTRPBF | IRFR4615TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.39 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 42 A | 33 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10V | 14 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Total Gate Charge (Qg) | 15 nC | 26 nC |
| Power Dissipation (PD) at TC=25C | 140 W | 144 W |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET / Trench MOSFET | IR MOSFET (N-Channel Enhancement Mode) |
| MSL Level | 1 (Unlimited) | β |
| RoHS Status | Compliant | β |
| Lead-Free Plating | Yes (PBF suffix) | β |
| Halogen-Free | Yes | β |
| Drain-Source Voltage (VDS) | β | 150 V |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| On-Resistance RDS(on) max at VGS=10V | β | 42 mOhm |
| Gate-Source Charge (Qgs) | β | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd] |
| Avalanche Energy (EAS) | β | 109 mJ |
| Operating Temperature Range | β | -55C to +175C |
| Lead-Free / RoHS | β | Yes (PBF suffix indicates Pb-free) |
| Single Pulse Avalanche Energy | β | 109 mJ |