IRLR3636TRLPBF vs IRLR3410TRPBF 对比
详细并排对比 IRLR3636TRLPBF 出自 Infineon 和 IRLR3410TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLR3636TRLPBF | IRLR3410TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.74 | $0.81 |
| FET Type | N-Channel MOSFET | N-Channel |
| Technology | IR HEXFET® (IR MOSFET™) | HEXFET (IR MOSFET, 5th generation) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, TC=25°C) | 50 A | — |
| Continuous Drain Current (ID, TC=100°C) | 32 A [DATA_NEEDED: exact TC=100°C ID rating] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM rating] | — |
| RDS(on) Max @ VGS=10V | 6.8 mΩ | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level) | — |
| Total Gate Charge (QG) | 33 nC | — |
| Power Dissipation (PD, TC=25°C) | 143 W | — |
| 工作温度范围 | -55 °C to +175 °C (TJ) | -55C to +175C (junction) |
| 封装 | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix) | Yes (PBF suffix) |
| Avalanche Rated | Yes (per Infineon datasheet family) | — |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 17 A |
| Power Dissipation (Pd) at Tc=25C | — | 79 W |
| On-Resistance RDS(on) max | — | 105 mOhm |
| Gate Threshold Voltage Vgs(th) | — | Logic-level (drive ~4.5V) |
| Total Gate Charge (Qg) | — | 22.7 nC |
| MSL 等级 | — | 1 (unlimited floor life at <30C/85% RH) |
| Drain Tab Connection | — | Tab electrically tied to Drain |
| Polarity | — | N-Channel enhancement mode |