IRLR3636TRLPBF vs IRLR3410TRPBF 비교
다음의 상세 나란히 비교: IRLR3636TRLPBF 제조: Infineon 및 IRLR3410TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRLR3636TRLPBF | IRLR3410TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.74 | $0.81 |
| FET Type | N-Channel MOSFET | N-Channel |
| Technology | IR HEXFET® (IR MOSFET™) | HEXFET (IR MOSFET, 5th generation) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, TC=25°C) | 50 A | — |
| Continuous Drain Current (ID, TC=100°C) | 32 A [DATA_NEEDED: exact TC=100°C ID rating] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM rating] | — |
| RDS(on) Max @ VGS=10V | 6.8 mΩ | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level) | — |
| Total Gate Charge (QG) | 33 nC | — |
| Power Dissipation (PD, TC=25°C) | 143 W | — |
| 동작 온도 범위 | -55 °C to +175 °C (TJ) | -55C to +175C (junction) |
| 패키지 | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| 실장 유형 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix) | Yes (PBF suffix) |
| Avalanche Rated | Yes (per Infineon datasheet family) | — |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 17 A |
| Power Dissipation (Pd) at Tc=25C | — | 79 W |
| On-Resistance RDS(on) max | — | 105 mOhm |
| Gate Threshold Voltage Vgs(th) | — | Logic-level (drive ~4.5V) |
| Total Gate Charge (Qg) | — | 22.7 nC |
| MSL 레벨 | — | 1 (unlimited floor life at <30C/85% RH) |
| Drain Tab Connection | — | Tab electrically tied to Drain |
| Polarity | — | N-Channel enhancement mode |