IRLZ34NSTRLPBF vs IRFS4010TRLPBF 对比
详细并排对比 IRLZ34NSTRLPBF 出自 Infineon 和 IRFS4010TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLZ34NSTRLPBF | IRFS4010TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.58 | $0.86 |
| FET Type | N-Channel | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | 100 V |
| Continuous Drain Current (ID) at TC | 30 A | — |
| Pulsed Drain Current (IDM) | 110 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) at VGS=5V | 35 mOhm (typical) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | 16.7 nC | 143 nC |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 68 W | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | — |
| 封装 | D2PAK (TO-263), surface mount | D2PAK (TO-263AB), surface mount |
| Built-in Body Diode | Yes | — |
| Configuration | Single with built-in diode | — |
| 安装类型 | Surface Mount | Surface Mount |
| Switching Frequency Optimization | Below 100 kHz | — |
| Cell Structure | HEXFET planar (5th generation) | — |
| Qualification | JEDEC standard | JEDEC standard |
| RoHS 状态 | Compliant (Pb-free) | Compliant |
| Technology | — | IR MOSFET (HEXFET) |
| Continuous Drain Current (ID) at TC=25C | — | 180 A |
| RDS(on) max @ VGS=10V | — | 4.7 mOhm |
| Gate-to-Source Voltage (VGS) max | — | Plus or minus 20 V |
| Power Dissipation (PD) at TC=25C | — | 375 W |
| 工作结温 | — | -55C to +175C |
| Gate Drive Voltage | — | 10 V (normal level, optimized) |
| MSL 等级 | — | 1 |