IRS2153DPBF vs IRS2153DSPBF 对比

详细并排对比 IRS2153DPBF 出自 Infineon 和 IRS2153DSPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRS2153DPBF IRS2153DSPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 不推荐新设计 有效
库存状态 有库存 有库存
单价(USD) $1.78 $0.98
Product Type Half-Bridge Gate Driver IC —
Driver Configuration Half-Bridge (High-Side + Low-Side) —
拓扑 Self-Oscillating (RC-timed) —
输出数量 2 (High-Side, Low-Side) 2 (HO, LO)
Offset Voltage (High-Side) 600 V (max) —
Output Current (Source, typ) 0.18 A —
Output Current (Sink, typ) 0.26 A —
Internal Oscillator Frequency [DATA_NEEDED: oscillator frequency range] —
Dead Time (typ) 0.5 us —
Half-Bridge Driver Propagation (typ) 1.1 us —
Bootstrap FET Integrated —
VCC Supply Voltage [DATA_NEEDED: VCC range] 10 V to 20 V
Supply Current (VCC, typ) 0.5 mA —
Shutdown Input Yes (programmable) —
工作结温 -40C to +125C —
封装 8-Pin PDIP (through-hole) 8-SOIC (SOIC-8)
MSL 等级 MSL2 / MSL3 (per Infineon datasheet family note) —
Qualification Level Industrial —
RoHS 状态 Compliant (Pb-free suffix) —
功能 — Half-bridge gate driver with RC input oscillator
Configuration — High-side + low-side driver, half-bridge
Maximum Offset Voltage (Voffset) — 600 V
VBS High-side Supply Voltage — VCC + 0.3 V (typical bootstrap)
Gate Drive Source Current (IO+) — 130 mA typical
Gate Drive Sink Current (IO-) — 270 mA typical
Rise Time (tr) — [DATA_NEEDED: tr] (typical ~100 ns)
Fall Time (tf) — [DATA_NEEDED: tf] (typical ~50 ns)
Internal Deadtime — ~1.2 us
工作温度 — -40 C to +125 C
Input Type — RC-input oscillator (no external PWM required)
Logic Polarity — Inverting / Non-inverting per channel
Undervoltage Lockout — Yes (VCC)
Technology — HVIC + latch-immune CMOS
安装类型 — Surface Mount

数据手册与资源

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