IRS2153DPBF vs IRS2153DSPBF 비교

다음의 상세 나란히 비교: IRS2153DPBF 제조: Infineon 및 IRS2153DSPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRS2153DPBF IRS2153DSPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 NRND 활성
재고 상태 In Stock In Stock
단가 (USD) $1.78 $0.98
Product Type Half-Bridge Gate Driver IC —
Driver Configuration Half-Bridge (High-Side + Low-Side) —
토폴로지 Self-Oscillating (RC-timed) —
출력 수 2 (High-Side, Low-Side) 2 (HO, LO)
Offset Voltage (High-Side) 600 V (max) —
Output Current (Source, typ) 0.18 A —
Output Current (Sink, typ) 0.26 A —
Internal Oscillator Frequency [DATA_NEEDED: oscillator frequency range] —
Dead Time (typ) 0.5 us —
Half-Bridge Driver Propagation (typ) 1.1 us —
Bootstrap FET Integrated —
VCC Supply Voltage [DATA_NEEDED: VCC range] 10 V to 20 V
Supply Current (VCC, typ) 0.5 mA —
Shutdown Input Yes (programmable) —
동작 접합 온도 -40C to +125C —
패키지 8-Pin PDIP (through-hole) 8-SOIC (SOIC-8)
MSL 레벨 MSL2 / MSL3 (per Infineon datasheet family note) —
Qualification Level Industrial —
RoHS 상태 Compliant (Pb-free suffix) —
기능 — Half-bridge gate driver with RC input oscillator
Configuration — High-side + low-side driver, half-bridge
Maximum Offset Voltage (Voffset) — 600 V
VBS High-side Supply Voltage — VCC + 0.3 V (typical bootstrap)
Gate Drive Source Current (IO+) — 130 mA typical
Gate Drive Sink Current (IO-) — 270 mA typical
Rise Time (tr) — [DATA_NEEDED: tr] (typical ~100 ns)
Fall Time (tf) — [DATA_NEEDED: tf] (typical ~50 ns)
Internal Deadtime — ~1.2 us
동작 온도 — -40 C to +125 C
Input Type — RC-input oscillator (no external PWM required)
Logic Polarity — Inverting / Non-inverting per channel
Undervoltage Lockout — Yes (VCC)
Technology — HVIC + latch-immune CMOS
실장 유형 — Surface Mount

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