IRS2153DSPBF vs IRS2153DSTRPBF 对比

详细并排对比 IRS2153DSPBF 出自 Infineon 和 IRS2153DSTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRS2153DSPBF IRS2153DSTRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.98 $0.42
功能 Half-bridge gate driver with RC input oscillator —
Configuration High-side + low-side driver, half-bridge —
输出数量 2 (HO, LO) —
Maximum Offset Voltage (Voffset) 600 V —
VCC Supply Voltage 10 V to 20 V —
VBS High-side Supply Voltage VCC + 0.3 V (typical bootstrap) —
Gate Drive Source Current (IO+) 130 mA typical —
Gate Drive Sink Current (IO-) 270 mA typical —
Rise Time (tr) [DATA_NEEDED: tr] (typical ~100 ns) —
Fall Time (tf) [DATA_NEEDED: tf] (typical ~50 ns) —
Internal Deadtime ~1.2 us —
工作温度 -40 C to +125 C —
封装 8-SOIC (SOIC-8) 8-pin SOIC
Input Type RC-input oscillator (no external PWM required) —
Logic Polarity Inverting / Non-inverting per channel —
Undervoltage Lockout Yes (VCC) —
Technology HVIC + latch-immune CMOS HVIC + latch-immune CMOS
安装类型 Surface Mount Surface Mount
拓扑 — Half-Bridge Gate Driver with internal oscillator
High-Side Floating Supply Absolute Max — 600 V
VDD Supply Voltage Range — 10 V to 20 V
Output Source Current (typ.) — 0.18 A
Output Sink Current (typ.) — 0.26 A
Internal Propagation Delay (typ.) — 1.1 us
Integrated Bootstrap FET — Yes
Oscillator Type — RC-based, similar to CMOS 555 timer
Programmable Shutdown Pin — Yes
工作温度范围 — -40C to +125C
RoHS 状态 — Compliant
Lead-Free — Yes

数据手册与资源

浏览全部产品 创建 BOM 获取报价