ISC008N06LM6ATMA1 vs ISC011N04NM7VATMA1 对比
详细并排对比 ISC008N06LM6ATMA1 出自 Infineon 和 ISC011N04NM7VATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC008N06LM6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at Ta | 44 A | — |
| Pulsed Drain Current (ID, pulse) at Tc | 378 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 221 W | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| RDS(on) max @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | — |
| Gate Threshold Voltage (VGS(th)) | Logic Level (1.0 V to 2.4 V typical) | — |
| 工作温度范围 | -55 C to +175 C (Tj) | -55 °C to +175 °C (TJ) |
| Package Type | PG-TDSON-8 (Surface Mount) | — |
| 安装方式 | Surface Mount, Tape & Reel | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| RoHS / Lead-Free Status | RoHS Compliant, Lead-Free | — |
| 无卤 | Yes | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Technology | — | Trench MOSFET, silicon |
| 封装 | — | PG-TDSON-8 (source-down) |
| 安装类型 | — | Surface Mount |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |