ISC009N03LF2SATMA1 vs ISZ056N03LF2SATMA1 对比
详细并排对比 ISC009N03LF2SATMA1 出自 Infineon 和 ISZ056N03LF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC009N03LF2SATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.48 | $0.49 |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS™ trench | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta | 43 A | 16 A |
| Continuous Drain Current (ID) at Tc | 341 A | 72 A |
| Power Dissipation (PD) at Ta | 3 W | 3 W |
| Power Dissipation (PD) at Tc | 188 W | 52 W |
| On-Resistance RDS(on) max | 0.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | 2.35 V (typ) |
| 封装 | PG-TDSON-8-62 (SuperSO8 5x6) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 °C to +175 °C (junction, [DATA_NEEDED: exact operating range from datasheet]) | -55 C to +175 C |
| Gate Drive Voltage (VGS) | 10 V (typical for rated RDS(on)) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | StrongIRFET 2 |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| On-Resistance (RDS(on)) max at VGS=10V | — | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |