ISC009N03LF2SATMA1 vs ISZ056N03LF2SATMA1 Comparison

Detailed side-by-side comparison of ISC009N03LF2SATMA1 by Infineon and ISZ056N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC009N03LF2SATMA1

ISC009N03LF2SATMA1 - 30V 341A 0.9mΞ© N-Channel MOSFET | Infineon

ISC009N03LF2SATMA1 βœ“ Active
Infineon
ISZ056N03LF2SATMA1 ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon

ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon

ISZ056N03LF2SATMA1 βœ“ Active

Specification Comparison

Parameter ISC009N03LF2SATMA1 ISZ056N03LF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.48 $0.49
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology OptiMOSβ„’ trench β€”
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta 43 A 16 A
Continuous Drain Current (ID) at Tc 341 A 72 A
Power Dissipation (PD) at Ta 3 W 3 W
Power Dissipation (PD) at Tc 188 W 52 W
On-Resistance RDS(on) max 0.9 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 2.35 V (typ) 2.35 V (typ)
Package PG-TDSON-8-62 (SuperSO8 5x6) PG-TSDSON-8 (PQFN 3.3x3.3 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +175 Β°C (junction, [DATA_NEEDED: exact operating range from datasheet]) -55 C to +175 C
Gate Drive Voltage (VGS) 10 V (typical for rated RDS(on)) β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Series β€” StrongIRFET 2
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: gate-source voltage max]
On-Resistance (RDS(on)) max at VGS=10V β€” 5.6 mOhm
On-Resistance (RDS(on)) max at VGS=4.5V β€” [DATA_NEEDED: RDS(on) at 4.5V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]

Datasheets & Resources

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